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Abstract

Phys. Rev. Lett. 98, 016401 (2007)

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Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields

Y. S. Oh,1 Kee Hoon Kim,1 P. A. Sharma,2 N. Harrison,2 H. Amitsuka,3 and J. A. Mydosh4

1CSCMR & FPRD, School of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea
2NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, New Mexico 87545, USA
3Graduate School of Science, Hokkaido University, N10W8 Sapporo 060-0810, Japan
4Institute of Physics II, University of Cologne, 50937 Cologne, Germany

(Received 20 September 2006; published 4 January 2007)

Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the “hidden order“ phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas–van Alphen data, the Hall data expose a strong interplay between the stability of the “hidden order,” the degree of polarization of the Fermi liquid, and the Fermi surface topology.

©2007 The American Physical Society

URL: http://link.aps.org/abstract/PRL/v98/e016401

doi:10.1103/PhysRevLett.98.016401

PACS: 71.20.Lp, 71.18.+y, 71.27.+a

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