Zeiss 1540 EsB Cross Beam Scanning Electron Microscope
Zeiss 1540 EsB cross beam scanning electron microscope.
This is a state-of-the-art dual beam field emission Scanning Electron Microscope (SEM) with an ultimate resolution of 1 nanometer. It is fully computer controlled with multi-resolution digital image capture. It is equipped with a low-energy capable Focused Ion Beam (FIB) column, which allows for live-imaging of samples at high magnification (both microscopes have 1 nm resolution) while simultaneously machining with 5 nm precision using a stream of Ga ions. A gas injection system makes it possible to deposit material for protective coatings and contacts as well as to modify etch rates and is an essential tool for the automated preparation of transmission electron microscope specimens.
Key features of this microscope are the in-column secondary electron and backscattered electron detectors that provide low-noise imaging during FIB material removal as well as imaging at very low voltages (reducing edge artifacts, channeling and beam penetration). The unique objective lens design uses an electrostatic field below the lens (unlike competing design which utilizes a strong magnetic field, causing limitations in overall performance and sample flexibility – particularly for ferromagnetic materials). The system also has an Energy Dispersive X-ray System (EDS) detector (for chemical analysis), and conventional and in-lens backscattered and secondary electron detectors. Transmission electron microscopy is also possible using the Scanning Transmission Electron Microscopy (STEM) detector.
Recently an electron lithography (Nabity Nanopattern Generating System) capability was added to this microscope. By utilizing the excellent optical performance inherent in this microscope, a wide range of devices including quantum structures (e.g. single electron transistors), optical structures (e.g. binary holograms and linear/circular gratings), electro-mechanical structures (e.g. Surface Acoustic Wave (SAW) and MEMS devices) and ultra-small sensors can be fabricated with high resolution. Pattern sizes may range from the nanometer scale up to the maximum field of view of the microscope, which can be as large as 10 mm. In addition the same system can control the focused ion beam for CAD-based device fabrication. This most recent version of this system is the fastest and highest resolution SEM lithography system currently available.
- Maximum Resolution 1 nanometer
- Detectors available: SE2, In-lens secondary, Energy and angle selective Backscattered, Quadrapole Backscattered, STEM, EDS (maximum resolution to 130 eV)
- E-beam lithography (NPGS) capable of FIB lithography
Information on how this instrument is being used is available on our scheduling page (accessible only to MagLab and FSU staff) and by contacting Bob Goddard.
